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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD907
DESCRIPTION *DC Current Gain : hFE = 40@ IC= 0.5A *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V(Min) *Complement to Type BD908 APPLICATIONS *Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range
VALUE 60 60 5 15 20 5 90 150 -65~150
UNIT V V V A A A W
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.38 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BD907
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA ;IB= 0
B
60
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
B
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 2.5A
3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10A; IB= 2.5A
2.5
V
VBE(on)
Base-Emitter On Voltage
IC= 5A ; VCE= 4V
1.5
V
ICBO
Collector Cutoff Current
VCB= 60V;IE= 0
0.5
mA
ICEO
Collector Cutoff Current
VCE= 30V;IB= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 4V
40
250
hFE-2
DC Current Gain
IC= 5A ; VCE= 4V
15
150
hFE-3
DC Current Gain
IC= 10A ; VCE= 4V
5
fT
Current-Gain--Bandwidth Product
IC= 0.5A ; VCE= 4V; ftest= 1.0MHz
3.0
MHz
isc Websitewww.iscsemi.cn
2


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